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DMC3028LSD document revision: 4 1 of 11 www.diodes.com july 2009 ? diodes incorporated a product line o f diodes incorporated DMC3028LSD 30v complementary dual enhancement mode mosfet product summary device v (br)dss r ds(on) i d t a = 25 c q1 30v 28m @ v gs = 10v 7.1a 45m @ v gs = 4.5v 5.6a q2 -30v 25m @ v gs = -10v -7.4a 41m @ v gs = -4.5v -5.7a description and applications this new generation complementary dual mosfet features low on- resistance and fast switching, making it ideal for high efficiency power management applications. ? motor control ? backlighting ? dc-dc converters ? power management functions features and benefits ? low on-resistance ? fast switching speed ? ?green? component and rohs compliant (note 1) mechanical data ? case: so-8 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 (note 1) ? moisture sensitivity: level 1 per j-std-020d ? terminals connections: see diagram ? terminals: finish - matte tin annealed over copper lead frame. solderable per mil-std-202, method 208 ? weight: 0.074 grams (approximate) ordering information (note 1) product marking reel size (inches) tape width (mm) quantity per reel DMC3028LSD-13 c3028ld 13 12 2,500 note: 1. diodes, inc. defines ?green? products as those which are eu rohs compli ant and contain no halogens or antimony compo unds; further information about diodes inc.?s ?green? policy can be found on our website. for packaging de tails, go to our website marking information = manufacturer?s marking c3028ld = product type marking code yyww = date code marking yy = year (ex: 09 = 2009) ww = week (01-52) top view d2 s2 g2 d1 q1 n-channel q2 p-channel s1 g1 d1 s1 g1 s2 g2 top view d1 d2 d2 c3028ld yy ww
DMC3028LSD document revision: 4 2 of 11 www.diodes.com july 2009 ? diodes incorporated a product line o f diodes incorporated DMC3028LSD maximum ratings @t a = 25c unless otherwise specified characteristic symbol n-channel - q1 p-channel - q2 units drain-source voltage v dss 30 -30 v gate-source voltage v gss 20 20 v continuous drain current v gs = 10v (notes 3 & 5) i d 7.1 -7.4 a t a = 70c (notes 3 & 5) 5.7 -5.9 (notes 2 & 5) 5.5 -5.8 (notes 2 & 6) 6.6 -6.8 pulsed drain current v gs = 10v (notes 4 & 5) i dm 34 -36 a continuous source current (body diode) (notes 3 & 5) i s 3.5 -3.5 a pulsed source current (body diode) (notes 4 & 5) i sm 34 -36 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol n-channel - q1 p-channel - q2 unit power dissipation linear derating factor (notes 2 & 5) p d 1.3 10 w mw/ c power dissipation linear derating factor (notes 2 & 6) p d 1.8 14 w mw/ c power dissipation linear derating factor (notes 3 & 5) p d 2.1 17 w mw/ c thermal resistance, junction to ambient (notes 2 & 5) (notes 2 & 6) (notes 3 & 5) r ja 100 70 60 c/w thermal resistance, junction to lead (notes 5 & 7) r jl 51 46 c/w operating and storage temperature range t j, t stg -55 to +150 c notes: 2. for a device surface mounted on 25mm x 25mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still a ir conditions; the device is measured when operating in a steady-state condition. 3. same as note (2), except the device is measured at t 10 sec. 4. same as note (2), except the device is pulsed with d= 0.02 and pulse width 300 s. the pulse current is limited by the maxi mum junction temperature. 5. for a dual device with one active die. 6. for a device with two active die running at equal power. 7. thermal resistance from junction to so lder-point (at the end of the drain lead).
DMC3028LSD document revision: 4 3 of 11 www.diodes.com july 2009 ? diodes incorporated a product line o f diodes incorporated DMC3028LSD 0.1 1 10 10m 100m 1 10 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 100 1m 10m 100m 1 10 100 1k 1 10 100 0.1 1 10 10m 100m 1 10 notes 2 & 5 100us 100ms 1s r ds(on) limited 1ms n-channel safe operating area single pulse, t amb =25c dc 10ms i d drain current (a) v ds drain-source voltage (v) one active die two active die derating curve max power dissipation (w) temperature (c) d=0.2 d=0.5 d=0.1 transient thermal impedance single pulse d=0.05 thermal resistance (c/w) pulse width (s) single pulse t amb =25c pulse power dissipation maximum power (w) pulse width (s) notes 2 & 5 single pulse, t amb =25c 1s dc 100us 1ms 10ms 100ms r ds(on) limited p-channel safe operating area -v ds drain-source voltage (v) -i d drain current (a)
DMC3028LSD document revision: 4 4 of 11 www.diodes.com july 2009 ? diodes incorporated a product line o f diodes incorporated DMC3028LSD electrical characteris tics ? q1 n-channel @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics drain-source breakdown voltage bv dss 30 ? ? v i d = 250 a, v gs = 0v zero gate voltage drain current i dss ? ? 0.5 a v ds = 30v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics gate threshold voltage v gs(th) 1.0 ? 3.0 v i d = 250 a, v ds = v gs static drain-source on-resistance (note 8) r ds (on) ? ? 0.028 ? v gs = 10v, i d = 6.0a 0.045 v gs = 4.5v, i d = 4.9a forward transconductance (notes 8 & 9) g fs ? 12 ? s v ds = 15v, i d = 6.0a diode forward voltage (note 8) v sd ? 0.68 1.2 v i s = 1.7a, v gs = 0v reverse recovery time (note 9) t rr 11.5 ? ns i s = 1.7a, di/dt= 100a/ s reverse recovery charge (note 9) q rr ? 4.4 ? nc dynamic characteristics ( note 9 ) input capacitance c iss ? 472 ? pf v ds = 15v, v gs = 0v f= 1mhz output capacitance c oss ? 178 ? pf reverse transfer capacitance c rss ? 65 ? pf total gate charge q g ? 5.2 ? nc v ds = 15v, v gs = 4.5v i d = 6a total gate charge q g ? 10.5 ? nc v ds = 15v, v gs = 10v i d = 6a gate-source charge q gs ? 1.86 ? nc gate-drain charge q gd ? 2.3 ? nc turn-on delay time (note 10) t d(on) ? 2.5 ? ns v dd = 15v, v gs = 10v i d = 1a, r g ? 6.0 turn-on rise time (note 10) t r ? 3.1 ? ns turn-off delay time (note 10) t d(off) ? 14 ? ns turn-off fall time (note 10) t f ? 9.7 ? ns notes: 8. measured under pulsed conditions. pulse width 300 s; duty cycle 2% 9. for design aid only, not subject to production testing. 10. switching characteristics are independent of operating junction temperatures.
DMC3028LSD document revision: 4 5 of 11 www.diodes.com july 2009 ? diodes incorporated a product line o f diodes incorporated DMC3028LSD q1 n-channel 0.1 1 10 0.01 0.1 1 10 0.1 1 10 0.01 0.1 1 10 234 0.1 1 10 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 0.01 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1e-3 0.01 0.1 1 10 4.5v 4v 5v 10v 3.5v 2.5v output characteristics t = 25c 3v v gs i d drain current (a) v ds drain-source voltage (v) 10v 4.5v 2v 2.5v 4v 3.5v 3v output characteristics t = 150c v gs i d drain current (a) v ds drain-source voltage (v) typical transfer characteristics v ds = 10v t = 25c t = 150c i d drain current (a) v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = 10v i d = 6a v gs( th) v gs = v ds i d = 250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 10v 3.5v 4v 3v on-resistance v drain current t = 25c 2.5v 4.5v v gs r ds(on) drain-source on-resistance (w) i d drain current (a) vgs = -3v t = 150c t = 25c source-drain diode forward voltage v sd source-drain voltage (v) i sd reverse drain current (a)
DMC3028LSD document revision: 4 6 of 11 www.diodes.com july 2009 ? diodes incorporated a product line o f diodes incorporated DMC3028LSD q1 n-channel continued 11 0 0 100 200 300 400 500 600 700 c rss c oss c iss v gs = 0v f = 1mhz c capacitance (pf) v ds - drain - source voltage (v) 01234567891011 0 1 2 3 4 5 6 7 8 9 10 i d = 6a v ds = 15v gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) v gs gate-source voltage (v) test circuits ? q1 n-channel current regulator charge gate charge test circuit switching time test circuit basicgatechargewaveform switching time waveforms d.u.t 50k 12v same as d.u.t v gs v gs v ds v g q gs q gd q g v gs 90% 10% t (on) t (on) t d(on) t r t r t v ds dd v r d r g v ds i d i g d(off)
DMC3028LSD document revision: 4 7 of 11 www.diodes.com july 2009 ? diodes incorporated a product line o f diodes incorporated DMC3028LSD electrical characteris tics ? q2 p-channel @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics drain-source breakdown voltage bv dss -30 ? ? v i d = -250 a, v gs = 0v zero gate voltage drain current i dss ? ? -0.5 a v ds = -30v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics gate threshold voltage v gs(th) -1.0 ? -3.0 v i d = -250 a, v ds = v gs static drain-source on-resistance (note 8) r ds (on) ? ? 0.025 ? v gs = -10v, i d = -7.1a 0.041 v gs = -4.5v, i d = -5.5a forward transconductance (notes 8 & 9) g fs ? 18.6 ? s v ds = -15v, i d = -7.1a diode forward voltage (note 8) v sd ? -0.80 -1.2 v i s = -1.7a, v gs = 0v reverse recovery time (note 9) t rr 16.2 ? ns i s = -2.2a, di/dt= 100a/ s reverse recovery charge (note 9) q rr ? 10 ? nc dynamic characteristics ( note 9 ) input capacitance c iss ? 1678 ? pf v ds = -15v, v gs = 0v f= 1mhz output capacitance c oss ? 303 ? pf reverse transfer capacitance c rss ? 178 ? pf total gate charge q g ? 16.4 ? nc v ds = -15v, v gs = -4.5v i d = -7.1a total gate charge q g ? 31.6 ? nc v ds = -15v, v gs = -10v i d = -7.1a gate-source charge q gs ? 4.3 ? nc gate-drain charge q gd ? 6.2 ? nc turn-on delay time (note 10) t d(on) ? 3.5 ? ns v dd = -15v, v gs = -10v i d = -1a, r g ? 6.0 turn-on rise time (note 10) t r ? 4.9 ? ns turn-off delay time (note 10) t d(off) ? 44 ? ns turn-off fall time (note 10) t f ? 28 ? ns notes: 8. measured under pulsed conditions. pulse width 300 s; duty cycle 2% 9. for design aid only, not subject to production testing. 10. switching characteristics are independent of operating junction temperatures.
DMC3028LSD document revision: 4 8 of 11 www.diodes.com july 2009 ? diodes incorporated a product line o f diodes incorporated DMC3028LSD q2 p-channel 0.1 1 10 0.1 1 10 0.1 1 10 0.01 0.1 1 10 23 0.1 1 10 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.0 1e-3 0.01 0.1 1 10 2.5v 10v 3.5v 4.5v output characteristics t = 25c 3v v gs -i d drain current (a) -v ds drain-source voltage (v) 10v 2.5v 2v 3.5v 3v output characteristics t = 150c v gs -i d drain current (a) -v ds drain-source voltage (v) typical transfer characteristics v ds = 10v t = 25c t = 150c -i d drain current (a) -v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = 10v i d = 7.1a v gs( th) v gs = v ds i d = 250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 2.5v 10v 3.5v 4v 3v on-resistance v drain current t = 25c v gs r ds(on) drain-source on-resistance ( ) -i d drain current (a) vgs = 0v t = 150c t = 25c source-drain diode forward voltage -v sd source-drain voltage (v) -i sd reverse drain current (a)
DMC3028LSD document revision: 4 9 of 11 www.diodes.com july 2009 ? diodes incorporated a product line o f diodes incorporated DMC3028LSD q2 p-channel continued 11 0 0 500 1000 1500 2000 2500 c rss c oss c iss v gs = 0v f = 1mhz c capacitance (pf) -v ds - drain - source voltage (v) 0 5 10 15 20 25 30 35 0 1 2 3 4 5 6 7 8 9 10 i d = 7.1a v ds = 15v gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) -v gs gate-source voltage (v) test circuits ? q2 p-channel c urrent regulator charge gate charge test circuit switching time test circuit basicgatechargewaveform switching time waveforms d.u.t 50k 0.2 f 12v same as d.u.t v gs v gs v ds v g q gs q gd q g v gs 90% 10% t (on) t (on) t d(on) t r t r t d(off) v ds v dd r d r g pulse width 1 s duty factor 0.1% v ds i d i g
DMC3028LSD document revision: 4 10 of 11 www.diodes.com july 2009 ? diodes incorporated a product line o f diodes incorporated DMC3028LSD package outline dimensions suggested pad layout dim inches millimeters dim inches millimeters min. max. min. max. min. max. min. max. a 0.053 0.069 1.35 1.75 e 0.050 bsc 1.27 bsc a1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 d 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 h 0.228 0.244 5.80 6.20 0 8 0 8 e 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 l 0.016 0.050 0.40 1.27 - - - - - 1.52 0.060 7.0 0.275 0.6 0 .024 1.27 0.050 4.0 0.155 mm inches hx45
DMC3028LSD document revision: 4 11 of 11 www.diodes.com july 2009 ? diodes incorporated a product line o f diodes incorporated DMC3028LSD important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2009, diodes incorporated www.diodes.com

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